low noise transistor npn silicon maximum ratings rating symbol value unit collectoremitter voltage v ceo 45 vdc collectorbase voltage v cbo 45 vdc emitterbase voltage v ebo 6.5 vdc collector current e continuous i c 200 madc total device dissipation @ t a = 25 c derate above 25 c p d 625 5.0 mw mw/ c total device dissipation @ t c = 25 c derate above 25 c p d 1.5 12 watts mw/ c operating and storage junction temperature range t j , t stg 55 to +150 c thermal characteristics characteristic symbol max unit thermal resistance, junction to ambient r ja (1) 200 c/w thermal resistance, junction to case r jc 83.3 c/w electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics collectoremitter breakdown voltage (2) (i c = 10 madc, i b = 0) v (br)ceo 45 e e vdc collectorbase breakdown voltage (i c = 100 adc, i e = 0) v (br)cbo 45 e e vdc emitterbase breakdown voltage (i e = 10 m adc, i c = 0) v (br)ebo 6.5 e e vdc collector cutoff current (v cb = 30 vdc, i e = 0) i cbo e 1.0 50 nadc 1. r q ja is measured with the device soldered into a typical printed circuit board. 2. pulse test: pulse width 300 s, duty cycle 2.0%. preferred devices are on semiconductor recommended choices for future use and best overall value. on semiconductor ? semiconductor components industries, llc, 2001 march, 2001 rev. 1 1 publication order number: mpsa18/d mpsa18 case 2911, style 1 to92 (to226aa) 1 2 3 on semiconductor preferred device collector 3 2 base 1 emitter
mpsa18 http://onsemi.com 2 electrical characteristics (t a = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit on characteristics (2) dc current gain (i c = 10 m adc, v ce = 5.0 vdc) (i c = 100 m adc, v ce = 5.0 vdc) (i c = 1.0 madc, v ce = 5.0 vdc) (i c = 10 madc, v ce = 5.0 vdc) h fe 400 500 500 500 580 850 1100 1150 e e e 1500 e collector emitter saturation v oltage (i c = 10 madc, i b = 0.5 madc) (i c = 50 madc, i b = 5.0 madc) v ce(sat) e e e 0.08 0.2 0.3 vdc baseemitter on voltage (i c = 1.0 madc, v ce = 5.0 vdc) v be(on) e 0.6 0.7 vdc smallsignal characteristics currentgain e bandwidth product (i c = 1.0 madc, v ce = 5.0 vdc, f = 100 mhz) f t 100 160 e mhz collectorbase capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb e 1.7 3.0 pf emitterbase capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb e 5.6 6.5 pf noise figure (i c = 100 m adc, v ce = 5.0 vdc, r s = 10 k w , f = 1.0 khz) (i c = 100 m adc, v ce = 5.0 vdc, r s = 1.0 k w , f = 100 hz) nf e e 0.5 4.0 1.5 e db equivalent short circuit noise voltage (i c = 100 m adc, v ce = 5.0 vdc, r s = 1.0 k w , f = 100 hz) v t e 6.5 e nv hz 2. pulse test: pulse width 300 s, duty cycle 2.0%. r s i n e n ideal transistor figure 1. transistor noise model
http://onsemi.com 3 figure 2. effects of frequency f, frequency (hz) 7.0 10 20 30 5.0 figure 3. effects of collector current i c , collector current (ma) figure 4. noise current f, frequency (hz) figure 5. wideband noise figure r s , source resistance (ohms) 3.0 10 noise characteristics (v ce = 5.0 vdc, t a = 25 c) noise voltage e n , noise voltage (nv) e n , noise voltage (nv) i n , noise current (pa) nf, noise figure (db) 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k bandwidth = 1.0 hz bandwidth = 1.0 hz bandwidth = 1.0 hz i c = 10 ma 300 m a 30 m a r s 0 3.0 ma 1.0 ma 7.0 10 20 30 5.0 3.0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 r s 0 f = 10 hz 100 hz 1.0 khz 10 khz 100 khz i c = 10 ma 3.0 ma 1.0 ma 300 m a 100 m a 10 m a r s 0 10 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 0.1 0.2 0.3 1.0 0.7 2.0 3.0 5.0 7.0 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k 0 4.0 8.0 12 16 20 bandwidth = 10 hz to 15.7 khz i c = 1.0 ma 500 m a 100 m a 10 m a 100 hz noise data 300 200 100 3.0 5.0 7.0 10 20 30 50 70 r s , source resistance (ohms) 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k v t , total noise voltage (nv) nf, noise figure (db) 0 4.0 8.0 12 16 20 figure 6. total noise voltage bandwidth = 1.0 hz i c = 10 ma 3.0 ma 1.0 ma 300 m a 100 m a 30 m a 10 m a 10 20 50 100 200 500 1k 2k 5k 10k 20k 50k 100k i c = 10 ma 300 m a 100 m a 30 m a 3.0 ma 1.0 ma 10 m a bandwidth = 1.0 hz r s , source resistance (ohms) figure 7. noise figure 0.5
mpsa18 http://onsemi.com 4 figure 8. dc current gain i c , collector current (ma) 0.4 1.0 2.0 3.0 4.0 0.3 0.01 h , dc current gain (normalized) 0.05 2.0 3.0 10 0.02 0.03 0.2 1.0 0.1 5.0 fe v ce = 5.0 v t a = 125 c 25 c -55 c 0.7 0.5 0.5 0.2 0.3 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 figure 9. aono voltages i c , collector current (ma) 0.4 0.6 0.8 1.0 0.2 figure 10. temperature coefficients i c , collector current (ma) v, voltage (volts) 0.01 0 -0.8 -1.2 -1.6 -2.4 t j = 25 c v ce(sat) @ i c /i b = 10 v be @ v ce = 5.0 v t j = 25 c to 125 c -55 c to 25 c r vbe , base-emitter q temperature coefficient (mv/ c) -0.4 -2.0 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 f t , current-gain bandwidth product (mhz) c, capacitance (pf) 8.0 0.8 1.0 2.0 3.0 4.0 6.0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 t j = 25 c c cb c ob c eb c ib 1.0 2.0 5.0 3.0 7.0 10 20 30 50 70 100 500 300 200 70 50 100 v ce = 5.0 v t j = 25 c figure 11. capacitance v r , reverse voltage (volts) figure 12. currentgain e bandwidth product i c , collector current (ma)
http://onsemi.com 5 package dimensions case 2911 issue al to92 (to226aa) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. contour of package beyond dimension r is uncontrolled. 4. lead dimension is uncontrolled in p and beyond dimension k minimum. r a p j l b k g h section xx c v d n n xx seating plane dim min max min max millimeters inches a 0.175 0.205 4.45 5.20 b 0.170 0.210 4.32 5.33 c 0.125 0.165 3.18 4.19 d 0.016 0.021 0.407 0.533 g 0.045 0.055 1.15 1.39 h 0.095 0.105 2.42 2.66 j 0.015 0.020 0.39 0.50 k 0.500 --- 12.70 --- l 0.250 --- 6.35 --- n 0.080 0.105 2.04 2.66 p --- 0.100 --- 2.54 r 0.115 --- 2.93 --- v 0.135 --- 3.43 --- 1 style 1: pin 1. emitter 2. base 3. collector
mpsa18 http://onsemi.com 6 notes
http://onsemi.com 7 notes
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